STB85NF55LT4
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N-Ch MOSFET, 55V, 80A, 8mR, D2PAK, Power
Дополнительная информация
N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers a low 8mΩ typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 55ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | D2PAK |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 1 |
| Input Capacitance | 4.05nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Drain to Source Breakdown Voltage | 55V |
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