STB85NF55T4
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Краткое описание:
55V N-CH MOSFET, 80A, 8mR, D2PAK, Power
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This STripFET™ II device offers a low 0.0062 Ohm typical drain-to-source resistance and 300W maximum power dissipation. Packaged in a D2PAK for surface mounting, it operates from -55°C to 175°C with fast switching characteristics, including a 25ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 1000 |
| Input Capacitance | 3.7nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 55V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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