STB8N65M5
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Краткое описание:
650V 7A N-CH MOSFET D2PAK 560mR RdsOn
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 7A continuous drain current. Offers a low 560mΩ typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates within a -55°C to 150°C temperature range and supports up to 70W power dissipation. Key switching characteristics include a 11ns fall time, 20ns turn-off delay, and 50ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 690pF |
| Power Dissipation | 70W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 560mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 560mR |
| Drain to Source Breakdown Voltage | 650V |
