STB8NM60D
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Краткое описание:
600V N-CH MOSFET, 8A, 1Ω, D2PAK, TO-220
Дополнительная информация
N-channel MOSFET featuring 600V drain-source breakdown voltage and 8A continuous drain current. Offers a low 1 Ohm drain-source on-resistance and 100W maximum power dissipation. Designed for surface mounting in a D2PAK package, this RoHS compliant component boasts fast switching speeds with turn-on delay of 13ns and fall time of 8ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Package/Case | D2PAK |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 380pF |
| Power Dissipation | 100W |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1R |
| Drain to Source Breakdown Voltage | 600V |
