STB95N3LLH6
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Краткое описание:
80A 30V 4.2mR N-CH MOSFET D2PAK
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source voltage and 80A continuous drain current. This surface-mount device offers a low 70W power dissipation and 4.2mΩ Rds On. Designed for high efficiency, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 19ns turn-on delay and 23.4ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | DeepGATE™, STripFET™ VI |
| Fall Time | 23.4ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.2nF |
| Power Dissipation | 70W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
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