STB9NK50ZT4
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Краткое описание:
500V N-CH MOSFET, 7.2A, 850mR, D2PAK, Zener-Protected
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 7.2A continuous drain current. This SuperMESH™ device offers a low 0.72 Ohm drain-source resistance at 500V and a maximum power dissipation of 110W. Designed for surface mounting in a D2PAK package, it includes integrated Zener protection and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and 22ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 850mR |
| Package/Case | D2PAK |
| Current Rating | 7.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1000 |
| Input Capacitance | 910pF |
| Power Dissipation | 110W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 850mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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