STB9NK60ZDT4
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Краткое описание:
600V 7A N-CH MOSFET, 0.95ohm, D2PAK, Power
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. This surface-mount device offers a maximum on-state resistance of 950mΩ at a nominal Vgs of 3.5V. With a 125W power dissipation and D2PAK package, it boasts fast switching characteristics including a 15ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for demanding power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | SuperFREDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Nominal Vgs | 3.5V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 1.11nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Dual Supply Voltage | 600V |
| On-State Resistance | 950mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 950MR |
| Drain to Source Breakdown Voltage | 600V |
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