STB9NK60ZT4
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Краткое описание:
600V 7A N-CH MOSFET D2PAK, 0.95 Ohm RdsOn
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 7A continuous drain current, and 950mΩ maximum drain-source on-resistance. Features Zener protection, 125W power dissipation, and a D2PAK surface-mount package. Operates from -55°C to 150°C with a 3.75V threshold voltage. Includes fast switching characteristics with 19ns turn-on delay and 15ns fall time. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Package/Case | D2PAK |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1000 |
| Input Capacitance | 1.11nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 19ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 950mR |
| Drain to Source Breakdown Voltage | 600V |
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