STD10NM60N
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Краткое описание:
600V 10A N-CH MOSFET DPAK, 550mR Rds(on)
Дополнительная информация
N-channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 10A Continuous Drain Current, and 550mΩ maximum Drain-Source On-Resistance. Features include a 15ns fall time, 32ns turn-off delay, and 10ns turn-on delay. This surface-mount device is housed in a DPAK package, offering a maximum power dissipation of 70W and operating temperature range of -55°C to 150°C. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Nominal Vgs | 3V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Input Capacitance | 540pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 600mR |
| Drain to Source Breakdown Voltage | 600V |
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