STD10P6F6
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Краткое описание:
P-Channel 60V 10A MOSFET DPAK, 160mR RdsOn
Дополнительная информация
P-channel MOSFET for power switching applications. Features a -60V drain-source breakdown voltage and a maximum continuous drain current of 10A. Offers a low 180mΩ typical drain-source on-resistance. Packaged in a DPAK surface-mount case, this device operates from -55°C to 175°C with a 35W power dissipation. Compliant with RoHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 340pF |
| Power Dissipation | 35W |
| Threshold Voltage | -4V |
| Number of Elements | 1 |
| Turn-Off Delay Time | 16.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 35W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 180MR |
| Drain to Source Breakdown Voltage | 60V |
