STD120N4F6
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Краткое описание:
N-Ch MOSFET 40V 80A 4mR DPAK Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and a low 3.5 mOhm drain-source on-resistance. This surface-mount device offers a continuous drain current of 80A and a maximum power dissipation of 110W, suitable for demanding applications. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with typical turn-on and fall times of 20ns. Packaged in DPAK for efficient thermal management, this RoHS compliant component is ideal for high-power switching and amplification.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.85nF |
| Power Dissipation | 110W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4MR |
| Drain to Source Breakdown Voltage | 40V |
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