STD12NF06L-1
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N-Ch MOSFET, 60V, 12A, 100mR RdsOn, IPAK
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 12A continuous drain current. This component offers a low 100mΩ typical drain-source on-resistance and is housed in a TO-251-3 IPAK package for through-hole mounting. Key electrical characteristics include a 2V threshold voltage, 350pF input capacitance, and fast switching times with a 10ns turn-on delay and 13ns fall time. Rated for a maximum power dissipation of 30W, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| Resistance | 100mR |
| Package/Case | TO-251-3 |
| Current Rating | 12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 75 |
| Input Capacitance | 350pF |
| Power Dissipation | 30W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 60V |
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