STD13N60M2
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Краткое описание:
600V 11A N-CH MOSFET DPAK, 380mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. Offers a low 0.35 Ohm typical drain-source on-resistance and 380mR maximum. Designed for surface mounting in a DPAK package, this component boasts a 110W power dissipation and fast switching times with a 9.5ns fall time. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 9.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 580pF |
| Power Dissipation | 110W |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380mR |
| Drain to Source Breakdown Voltage | 650V |
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