STD14NM50N
Снят с производства
Краткое описание:
500V 12A N-CH Power MOSFET DPAK TO-252
Дополнительная информация
N-channel Power MOSFET, 500V Drain-Source Voltage, 12A Continuous Drain Current. Features MDmesh II process technology, enhancement mode, and a single element configuration. Housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads, offering a maximum power dissipation of 90W and an operating temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Package Width (mm) | 6.2(Max) |
| Process Technology | MDmesh II |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.4(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.63(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 27nC |
| Typical Gate Charge @ Vgs | 27@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 320@10VmOhm |
| Typical Input Capacitance @ Vds | 816@50VpF |
| Maximum Continuous Drain Current | 12A |
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