STD155N3H6
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Краткое описание:
N-Ch MOSFET, 30V, 3mR, 80A, DPAK, Power
Дополнительная информация
N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers low 2.5 mOhm drain-source on-resistance and 110W maximum power dissipation. Surface-mount DPAK package with a 3.65nF input capacitance. Operates across a wide temperature range from -55°C to 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.65nF |
| Power Dissipation | 110W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3MR |
| Drain to Source Breakdown Voltage | 30V |
