STD15NF10T4

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STD15NF10T4 - Stmicroelectronics
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Краткое описание: 100V 23A N-CH MOSFET, 65mR RdsOn, DPAK, SM
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 100V drain-source breakdown voltage and 65mΩ maximum drain-source on-resistance. This surface-mount device offers a continuous drain current of 23A and a maximum power dissipation of 70W. It operates within a temperature range of -55°C to 175°C and is housed in a DPAK (TO-252) package. Key switching characteristics include a 17ns fall time, 49ns turn-off delay, and 60ns turn-on delay.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 17ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 65mR
Package/Case TO-252
Current Rating 23A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 2500
Input Capacitance 870pF
Power Dissipation 70W
Threshold Voltage 3V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 60ns
Radiation Hardening No
Turn-Off Delay Time 49ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 65mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 65mR
Drain to Source Breakdown Voltage 100V

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