STD17NF03LT4

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STD17NF03LT4 - Stmicroelectronics
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Краткое описание: 17A 30V N-CH MOSFET DPAK 50mR RDS(on)
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 17A continuous drain current. Offers a low 50mΩ maximum drain-source on-resistance. This surface-mount DPAK package component operates within a -55°C to 175°C temperature range and has a 30W power dissipation. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 22ns.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 22ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 50mR
Package/Case DPAK
Current Rating 17A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1
Input Capacitance 320pF
Power Dissipation 30W
Threshold Voltage 1.5V
Number of Elements 1
Turn-On Delay Time 11ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Reach SVHC Compliant No
Max Power Dissipation 30W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 38mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 17A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 50mR
Drain to Source Breakdown Voltage 30V

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