STD1805T4
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Краткое описание:
60V 5A NPN BJT Power Transistor, TO-252 DPAK, 150MHz
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for power applications, featuring a 60V collector-emitter breakdown voltage and a 5A maximum collector current. This surface-mount device, housed in a TO-252 package, offers a transition frequency of 150MHz and a minimum hFE of 200. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 15W. The transistor is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | TO-252 |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 150V |
| Package Quantity | 1 |
| Power Dissipation | 15W |
| Number of Elements | 1 |
| Saturation Current | 5A |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Power Dissipation | 15W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
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