STD1HN60K3
Производится
Увеличить
Краткое описание:
600V N-CH MOSFET, 1.2A, 6.7 Ohm, DPAK, Surface Mount
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET, 600V drain-source breakdown voltage, 1.2A continuous drain current. Features 6.7 Ohm typical drain-source resistance, 8 Ohm maximum Rds(on), and 27W power dissipation. Operates with a 30V gate-source voltage, offering fast switching with 7ns turn-on delay and 23ns turn-off delay. Packaged in a surface-mount DPAK for efficient thermal management, with dimensions of 6.2mm width, 6.6mm length, and 2.4mm height. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 140pF |
| Power Dissipation | 27W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 27W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 8R |
| Drain to Source Breakdown Voltage | 600V |
