STD1NK80ZT4
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Краткое описание:
800V N-CH MOSFET, 1A, 13R Rds(on), DPAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 1A continuous drain current. Offers a typical 13 Ohm drain-source on-resistance, with a maximum of 16 Ohm. Housed in a surface-mount DPAK package, this component boasts a 45W power dissipation and operates within a temperature range of -55°C to 150°C. Includes Zener protection for enhanced reliability.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 55ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16R |
| Package/Case | DPAK |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 2500 |
| Input Capacitance | 160pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.75V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 16R |
| Drain to Source Breakdown Voltage | 800V |
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