STD20N20T4
Снят с производства
Увеличить
Краткое описание:
200V 18A N-CH MOSFET, DPAK, 125mR RdsOn, 90W
Дополнительная информация
N-CHANNEL Power MOSFET featuring 200V Drain to Source Breakdown Voltage and 18A Continuous Drain Current. This surface mount component offers a low 125mΩ Rds On Max and 90W Max Power Dissipation. Key specifications include a 20V Gate to Source Voltage, 940pF Input Capacitance, and fast switching times with a 15ns Turn-On Delay Time and 10ns Fall Time. Packaged in DPAK for tape and reel distribution.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Current | 18A |
| Voltage | 200V |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Nominal Vgs | 3V |
| Package/Case | DPAK |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 940pF |
| Power Dissipation | 90W |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
