STD22NM20NT4
Снят с производства
Краткое описание:
200V 22A N-CH MOSFET, 105mR Rds On, DPAK
Дополнительная информация
N-Channel Power MOSFET, DPAK package, offering 200V drain-source breakdown voltage and 22A continuous drain current. Features 105mΩ on-state resistance at 10Vgs, 800pF input capacitance, and 100W maximum power dissipation. Operates from -65°C to 150°C with a 20V gate-source voltage rating. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Resistance | 105mR |
| Nominal Vgs | 4.2V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 22A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 800pF |
| Power Dissipation | 100W |
| Threshold Voltage | 4.2V |
| Dual Supply Voltage | 200V |
| On-State Resistance | 105mR |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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