STD25NF10LT4
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Краткое описание:
100V 25A N-Ch MOSFET, 30mR Rds(on), DPAK
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 25A continuous drain current. Offers low 30mΩ drain-source on-resistance at a nominal 2.5V gate-source voltage. Designed for surface mount applications in a DPAK package, this component operates from -55°C to 175°C with a maximum power dissipation of 100W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 20ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ II |
| Current | 17A |
| Voltage | 100V |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | 2.5V |
| Package/Case | DPAK |
| Current Rating | 25A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 1.71nF |
| Power Dissipation | 100W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 58ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 35mR |
| Drain to Source Breakdown Voltage | 100V |
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