STD25NF10T4
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N-Ch MOSFET, 100V, 25A, 38mR RdsOn, DPAK
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 25A continuous drain current. This surface-mount device offers a low 33mΩ typical drain-source on-resistance, with a maximum of 38mΩ. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 100W. The MOSFET is housed in a DPAK package, suitable for tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 38mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 25A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 1.55nF |
| Power Dissipation | 100W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 33mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 38mR |
| Drain to Source Breakdown Voltage | 100V |
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