STD25NF20

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STD25NF20 - Stmicroelectronics
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Краткое описание: 200V 18A N-CH MOSFET DPAK 100mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade N-channel power MOSFET featuring 200V drain-source breakdown voltage and 18A continuous drain current. Offers a low 0.10 Ohm typical drain-source resistance, with a maximum of 0.125 Ohm. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 110W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 10ns fall time, with input capacitance at 940pF.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 125mR
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 940pF
Power Dissipation 110W
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Max Power Dissipation 110W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 100mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 200V
Drain to Source Breakdown Voltage 200V

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