STD26P3LLH6
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Краткое описание:
P-Channel 30V 12A Power MOSFET DPAK
Дополнительная информация
P-channel Power MOSFET featuring a 30V drain-source breakdown voltage and 12A continuous drain current. Offers a low 5.5mΩ maximum drain-source on-resistance and 30mΩ typical resistance. Designed for surface mounting in a DPAK package, this component boasts fast switching speeds with a 15ns turn-on delay and 21ns fall time. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 40W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | P-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.45nF |
| Threshold Voltage | -2.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 30mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.5mR |
| Drain to Source Breakdown Voltage | -30V |
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