STD2HNK60Z
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Краткое описание:
600V N-CH MOSFET 2A 4.8R DPAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 2A continuous drain current. Offers a low 4.8 Ohm maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this component operates within a -55°C to 150°C temperature range with 45W maximum power dissipation. Includes Zener protection and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.8R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 280pF |
| Power Dissipation | 45W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 4.8R |
| Drain to Source Breakdown Voltage | 600V |
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