STD2N80K5
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Краткое описание:
800V 2A N-CH MOSFET DPAK 3.5 Ohm
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2A continuous drain current. This surface-mount device offers a typical 3.5 Ohm drain-source resistance and is housed in a DPAK package. Key specifications include a 30V gate-source voltage, 150°C maximum operating temperature, and 45W maximum power dissipation. The component is RoHS compliant and lead-free, with a turn-on delay of 8ns and turn-off delay of 19ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 95pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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