STD2NK90ZT4

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STD2NK90ZT4 - Stmicroelectronics
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Краткое описание: 900V N-CH MOSFET, 2.1A, 6.5 Ohm, DPAK, SuperMESH
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET, 900V drain-source breakdown voltage, 2.1A continuous drain current, and 6.5 Ohm maximum drain-source on-resistance. Features a DPAK surface-mount package with a maximum power dissipation of 70W. Operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 21ns and fall time of 40ns. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 40ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6.5R
Package/Case DPAK
Current Rating 2.1A
RoHS Compliant Yes
DC Rated Voltage 900V
Package Quantity 1
Input Capacitance 485pF
Power Dissipation 70W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 21ns
Radiation Hardening No
Turn-Off Delay Time 43ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 6.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.1A
Drain to Source Voltage (Vdss) 900V
Drain-source On Resistance-Max 6.5R
Drain to Source Breakdown Voltage 900V

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