STD30NF06T4

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STD30NF06T4 - Stmicroelectronics
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Краткое описание: 60V 28A N-Channel Power MOSFET, 20mR RdsOn, DPAK
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel POWER MOSFET featuring 60V drain-source breakdown voltage and 28A continuous drain current. This surface-mount device offers a low 20mΩ drain-source on-resistance and 70W power dissipation. Designed with a DPAK package and STripFET™ II technology, it operates from -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage and 1.75nF input capacitance.
RoHS Compliant
Mount Surface Mount
Series STripFET™
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 28mR
Nominal Vgs 4V
Termination SMD/SMT
Package/Case DPAK
Current Rating 28A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1
Input Capacitance 1.75nF
Power Dissipation 70W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 20ns
Dual Supply Voltage 60V
Radiation Hardening No
Turn-Off Delay Time 50ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 20mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 28A
Drain to Source Voltage (Vdss) 60V
Drain to Source Breakdown Voltage 60V

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