STD35NF06LT4

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STD35NF06LT4 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET 60V 35A 17mR DPAK Power Transistor
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 60V drain-source breakdown voltage and 35A continuous drain current. Offers low on-resistance with a maximum of 17mΩ at 10Vgs. Designed for surface mounting in a TO-252 package, this component boasts 80W maximum power dissipation and operates from -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 20ns fall time.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 20ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 17mR
Package/Case TO-252
Current Rating 35A
RoHS Compliant Yes
DC Rated Voltage 60V
Package Quantity 1
Input Capacitance 1.7nF
Power Dissipation 80W
Threshold Voltage 1V
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Max Power Dissipation 80W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16mR
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 17mR
Drain to Source Breakdown Voltage 60V

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