STD3N40K3

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STD3N40K3 - Stmicroelectronics
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Краткое описание: 400V 2A N-CH Power MOSFET, DPAK, Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features a maximum drain-source voltage of 400V and a continuous drain current of 2A. Offers a maximum power dissipation of 30W and a gate-source voltage range of ±30V. Operates within a temperature range of -55°C to 150°C.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3(Max)
Package Material Plastic
Package Width (mm) 6.2(Max)
Process Technology SuperMESH
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.4(Max)
Package Length (mm) 6.6(Max)
Seated Plane Height (mm) 2.63(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 30000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 11nC
Typical Gate Charge @ Vgs 11@10VnC
Maximum Gate Source Voltage ±30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 400V
Maximum Gate Threshold Voltage 4.5V
Maximum Drain Source Resistance 3400@10VmOhm
Typical Input Capacitance @ Vds 165@50VpF
Maximum Continuous Drain Current 2A

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