STD3N80K5
Производится
Увеличить
Краткое описание:
800V N-CH MOSFET, 2.8 Ohm Rds(on), 2.5A ID, DPAK, SM
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 2.5A continuous drain current. Offers a typical 2.8 Ohm drain-to-source resistance and 3.5 Ohm Rds On max. Surface mountable in a TO-252-3 (DPAK) package with a maximum power dissipation of 110W. Includes fast switching characteristics with turn-on delay time of 8.5ns and fall time of 25ns. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH5™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5R |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 130pF |
| Power Dissipation | 110W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20.5ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
