STD3NK50ZT4
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Краткое описание:
500V N-CH MOSFET, 2.3A, 2.8R RdsOn, DPAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 2.3A continuous drain current. Surface mount DPAK package offers 2.8 Ohm typical drain-source on-resistance. Ideal for applications requiring fast switching with 8ns turn-on delay and 14ns fall time, operating up to 150°C. Maximum power dissipation of 45W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 3.3R |
| Package/Case | DPAK |
| Current Rating | 2.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 280pF |
| Power Dissipation | 45W |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3.3R |
| Drain to Source Breakdown Voltage | 500V |
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