STD3NK60ZT4

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STD3NK60ZT4 - Stmicroelectronics
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Краткое описание: 600V N-CH MOSFET, 2.4A, 3.6 Ohm, DPAK, SuperMESH
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH PowerMOSFET featuring 600V drain-source breakdown voltage and 2.4A continuous drain current. Surface mount DPAK package offers 3.6 Ohm typical drain-source on-resistance. Fast switching characteristics include 9ns turn-on delay and 14ns fall time. Maximum power dissipation is 45W with an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.6R
Nominal Vgs 3.75V
Package/Case DPAK
Current Rating 2.4A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 2500
Input Capacitance 311pF
Power Dissipation 45W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 45W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.6R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.4A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 3.6R
Drain to Source Breakdown Voltage 600V

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