STD3NK90ZT4
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Краткое описание:
900V N-CH MOSFET, 3A, 4.8R RdsOn, DPAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 900V drain-source breakdown voltage, 3A continuous drain current, and 4.8 Ohm maximum drain-source on-resistance. Features 18ns fall time and 45ns turn-off delay time. Surface mount DPAK package with 90W power dissipation. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.8R |
| Package/Case | DPAK |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| Package Quantity | 2500 |
| Input Capacitance | 590pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 4.8R |
| Drain to Source Breakdown Voltage | 900V |
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