STD3NM60N
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Краткое описание:
600V N-CH MOSFET, 3.3A, 1.8R, DPAK, Surface Mount
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.8 Ohm maximum drain-source on-resistance. This surface mount device offers a continuous drain current of 3.3A and a maximum power dissipation of 50W. Designed with a DPAK package, it exhibits a turn-on delay time of 6ns and a fall time of 31ns. Operating temperature range spans from -55°C to 150°C, with RoHS compliance and lead-free construction.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.8R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 188pF |
| Power Dissipation | 50W |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.8R |
| Drain to Source Breakdown Voltage | 600V |
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