STD3PK50Z
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Краткое описание:
500V P-CH MOSFET, 3 Ohm, 2.8A, DPAK, Zener-Protected
Дополнительная информация
P-channel SuperMESH™ Power MOSFET, 500V drain-source breakdown voltage, 3 Ohm drain-source on-resistance, and 2.8A continuous drain current. Features Zener protection, a DPAK surface mount package, and a maximum power dissipation of 85W. Operates from -55°C to 150°C with a gate-source voltage rating of 30V. RoHS compliant with typical turn-on delay of 16ns and fall time of 26ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.4mm |
| Height | 7mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | P-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4R |
| Nominal Vgs | 3.75V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 620pF |
| Power Dissipation | 70W |
| Threshold Voltage | -3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 3R |
| Drain to Source Breakdown Voltage | 500V |
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