STD40NF10
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Краткое описание:
N-Ch MOSFET 100V 50A 28mR DPAK Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 50A continuous drain current. This surface-mount device offers a low 28mΩ maximum drain-source on-resistance. Operating across a wide temperature range from -55°C to 175°C, it supports 125W maximum power dissipation. The DPAK package facilitates efficient heat management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.18nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 54ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 28mR |
| Drain to Source Breakdown Voltage | 100V |
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