N-channel STripFET™ power MOSFET featuring 30V drain-source breakdown voltage and 40A continuous drain current. Offers low 11.5mΩ drain-to-source resistance at VGS=10V, 5A. Designed for surface mounting in a TO-252-3 package, this component boasts low gate charge for fast switching with turn-on delay of 23ns and fall time of 28ns. Maximum power dissipation is 80W, with an operating temperature range of -55°C to 175°C. RoHS compliant and lead-free.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Series |
STripFET™ |
| Polarity |
N-CHANNEL |
| Fall Time |
28ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
11mR |
| Package/Case |
TO-252-3 |
| Current Rating |
40A |
| RoHS Compliant |
Yes |
| DC Rated Voltage |
30V |
| Package Quantity |
1 |
| Input Capacitance |
1.65nF |
| Power Dissipation |
80W |
| Turn-On Delay Time |
23ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
27ns |
| Max Power Dissipation |
80W |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
11.5mR |
| Gate to Source Voltage (Vgs) |
16V |
| Continuous Drain Current (ID) |
40A |
| Drain to Source Voltage (Vdss) |
30V |
| Drain to Source Breakdown Voltage |
30V |