STD4N52K3
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Краткое описание:
525V N-CH Power MOSFET, 2.5A, DPAK, TO-252
Дополнительная информация
N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features a maximum drain-source voltage of 525V and a continuous drain current of 2.5A. Utilizes SuperMESH 3 process technology with a maximum drain-source on-resistance of 2600 mOhm at 10V. The DPAK package offers a gull-wing lead shape and a tab for enhanced thermal performance.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Package Width (mm) | 6.2(Max) |
| Process Technology | SuperMESH 3 |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.4(Max) |
| Package Length (mm) | 6.6(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.63(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 11nC |
| Typical Gate Charge @ Vgs | 11@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 525V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 2600@10VmOhm |
| Typical Input Capacitance @ Vds | 334@100VpF |
| Maximum Continuous Drain Current | 2.5A |
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