STD4N62K3
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Краткое описание:
620V N-CH MOSFET, 3.8A, 1.95R, DPAK, SuperMESH3
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET, 620V drain-source breakdown voltage, 3.8A continuous drain current, and 1.95 Ohm maximum drain-source on-resistance. Features include a 30V gate-source voltage rating, 450pF input capacitance, and 70W maximum power dissipation. This surface-mount device is housed in a DPAK package with dimensions of 6.6mm (L) x 6.2mm (W) x 2.4mm (H). Operates from -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 19ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.95R |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 450pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.95R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.95R |
| Drain to Source Breakdown Voltage | 620V |
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