STD4NK50ZD
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Краткое описание:
500V 3A N-CH MOSFET, 2.7R Rds(on), DPAK, SMD
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. This surface-mount component offers a low 2.7 Ohm drain-source on-resistance. Designed for efficient switching, it exhibits typical turn-on delay of 9.5ns and fall time of 22ns. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 45W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.7R |
| Nominal Vgs | 2.3V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 310pF |
| Power Dissipation | 45W |
| Turn-On Delay Time | 9.5ns |
| Dual Supply Voltage | 500V |
| On-State Resistance | 2.7R |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 2.7R |
| Drain to Source Breakdown Voltage | 500V |
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