STD4NK50ZD-1
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Краткое описание:
500V 3A N-CH MOSFET TO-251 2.7R Power Transistor
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 3A continuous drain current. This component offers a low 2.7 Ohm drain-to-source resistance (Rds On Max) and a 3.5V nominal gate-to-source threshold voltage. Designed for through-hole mounting in a TO-251 package, it boasts a maximum power dissipation of 45W and fast switching characteristics with a 22ns fall time and 23ns turn-off delay. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is supplied in rail/tube packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Packaging | Rail/Tube |
| Rds On Max | 2.7R |
| Nominal Vgs | 3.5V |
| Termination | Through Hole |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 310pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.5V |
| Dual Supply Voltage | 500V |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.7R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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