STD4NK60Z-1
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Краткое описание:
600V 4A N-CH MOSFET, 2 Ohm, IPAK, Through Hole
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and a maximum continuous drain current of 4A. This through-hole component offers a low drain-source on-resistance of 2 Ohms maximum and 1.7 Ohms typical. Designed for efficient switching, it exhibits turn-on delay time of 12ns and fall time of 16.5ns. Housed in a TO-251-3 IPAK package, it supports a maximum power dissipation of 70W and operates within a temperature range of -55°C to 150°C. This RoHS compliant and lead-free component is supplied in rail/tube packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 16.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Package/Case | TO-251-3 |
| RoHS Compliant | Yes |
| Package Quantity | 75 |
| Input Capacitance | 510pF |
| Power Dissipation | 70W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Drain to Source Breakdown Voltage | 600V |
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