STD4NK80ZT4
Производится
Увеличить
Краткое описание:
800V 3A N-CH MOSFET DPAK 3.5R SuperMESH
Дополнительная информация
N-CHANNEL SuperMESH™ Power MOSFET, 800V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 3.5 Ohm Max Drain-Source On-Resistance. Features include 80W Max Power Dissipation, 30V Gate-to-Source Voltage, and 3.75V Threshold Voltage. This surface mount DPAK package component offers 32ns Fall Time and 35ns Turn-Off Delay Time. RoHS compliant and Lead Free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 32ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.5R |
| Package/Case | DPAK |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 575pF |
| Power Dissipation | 80W |
| Threshold Voltage | 3.75V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3.5R |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
