STD5N20LT4
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Краткое описание:
200V 5A N-CH MOSFET DPAK 650mR
Дополнительная информация
N-channel power MOSFET featuring 200V drain-source breakdown voltage and 5A continuous drain current. Offers low 650mΩ drain-source on-resistance at a nominal 2.5V gate-source voltage. Designed for surface mounting in a DPAK package, this component boasts a maximum power dissipation of 33W and operates within a temperature range of -55°C to 150°C. RoHS compliant with fast switching characteristics including a 11.5ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.2mm |
| Height | 2.4mm |
| Length | 6.6mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 15.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 700mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | DPAK |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 242pF |
| Power Dissipation | 33W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11.5ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 33W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 650mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 700mR |
| Drain to Source Breakdown Voltage | 200V |
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