STD5N52U

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STD5N52U - Stmicroelectronics
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Краткое описание: 525V N-CH MOSFET, 4.4A, 1.28R, DPAK, UltraFASTmesh
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

UltraFASTmesh™ N-channel power MOSFET, 525V drain-source breakdown voltage, 4.4A continuous drain current, and 1.28 Ohm maximum drain-source on-resistance. Features a 15ns fall time and 23.1ns turn-off delay time. Packaged in a DPAK surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 70W.
RoHS Compliant
Mount Surface Mount
Series UltraFASTmesh™
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.5R
Nominal Vgs 3.75V
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 529pF
Power Dissipation 70W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 11.4ns
Radiation Hardening No
Turn-Off Delay Time 23.1ns
Reach SVHC Compliant No
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.28R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4.4A
Drain to Source Voltage (Vdss) 525V
Drain-source On Resistance-Max 1.28R
Drain to Source Breakdown Voltage 525V

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