STD5N95K3

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STD5N95K3 - Stmicroelectronics
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Краткое описание: 950V N-CH MOSFET 4A 3R DPAK Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH3™ Power MOSFET, 950V Drain to Source Breakdown Voltage, 3 Ohm Drain-source On Resistance-Max. Features 4A Continuous Drain Current, 90W Max Power Dissipation, and Zener protection. Surface mount DPAK package with 18ns fall time and 32ns turn-off delay. Operates from -55°C to 150°C, RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH3™
Polarity N-CHANNEL
Fall Time 18ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.5R
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 460pF
Power Dissipation 90W
Threshold Voltage 4V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Reach SVHC Compliant No
Max Power Dissipation 90W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4A
Drain to Source Voltage (Vdss) 950V
Drain-source On Resistance-Max 3.5R
Drain to Source Breakdown Voltage 950V

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