STD5N95K5

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STD5N95K5 - Stmicroelectronics
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Краткое описание: 950V N-CH MOSFET, 3.5A, 2 Ohm, DPAK, Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 950V drain-to-source breakdown voltage and 3.5A continuous drain current. Offers a low 2 Ohm typical drain-to-source resistance, with a maximum of 2.5 Ohm. Designed for surface mounting in a DPAK package, this component boasts fast switching characteristics with turn-on delay of 12ns and fall time of 25ns. Maximum power dissipation is 70W, operating within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 6.2mm
Height 2.4mm
Length 6.6mm
Series SuperMESH5™
Weight 0.139332oz
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 2.5R
Package/Case DPAK
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 220pF
Number of Channels 1
Turn-On Delay Time 12ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.5A
Drain to Source Voltage (Vdss) 950V
Drain to Source Breakdown Voltage 950V

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